P Type GaN Template

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.  

 

“Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer's requests,including researcher and device foundry",said Victor Chan, a senior marketing manager for the company.

 

The Product

 

New substrates consist of an  p-GaN layer deposited on 2-inch GaN/sapphire template.  

 

Crystal Structure:

 

p-GaN  >=2um

u-GaN   >=2um

 

Buffer layer:-

 

Sapphire  430um 

 

 

About Xiamen Powerway Advanced Material Co., Ltd

 

 

 

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

 

In 2001,PAM-XIAMEN has been involved in GaN material research.PAM-XIAMEN now offer  GaN, InGaN, InN, and AlN epitaxial products with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities.

 

If you need more information about p-GaN wafer, please visit: http://www.powerwaywafer.com/GaN-Templates.html