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Xiamen Powerway Advanced Material Co.,Ltd., a leading  supplier of Ge wafer Substrate  and other related products and services And now PAM-XIAMEN offer specification as follows:

Ge wafer for microelectronic application
N type, Sb doped Ge wafer
N type,undoped Ge wafer
P type,Ga doped Ge wafer
Available size:2”-4”
Available orientation: (100),(111),or custom specs.
Available grade: IR grade, electronic grade and cell grade
Resistivity:
N - type : 0.007-30 ohm-cm
P - type : 0.001-30 ohm-cm
Undoped : >=30 ohm-cm 
Surface: as-cut, single side polished, double side polished

Ge wafer for optical grade: 
SL.No Material Specifications:  
1 Crystalline Form : Polycrystalline
2 Conductivity Type : n-type
3 Absorption Coefficient, at 25°C 0.035cm-1 max @10.6µm
4 Typical Resistivity : 3-40 ohm-cm
5 Density : 5.3 g/cc
6 Mohs Hardness : 6.3
7 Oxygen Content : < 0.03 ppm
8 Holes and Inclusions: <0.05 mm
9 Poisson Ratio : 0.278
10 Youngs Modulus (E) : 100 Gpa
SL.No Optical Properties:  
1 dn/dt  from 250-350 K : 4 X 10-4 K-1
2 Transmission at 25°C @10.6 µm wavelength  
  for uncoated sample of thickness 10mm : Max. 47% or more
3 Refractive Index @ 10.8 µm : 4.00372471±0.0005
SL.No
Thermal Properties  
1 Melting Point (K) : 1210.4
2 Heat Capacity @ 300K (J/kg.K): 322
3 Thermal Conductivity @293 K : 59 Wm-1 K-1
4 Coefficient Thermal Expansion @ (20°C) (10-6 K): 5.8

Relative products:
ge wafer
ge wafer cleaning
si ge wafer
ge wafer breaker
ge on siliconwafer

Source: PAM-XIAMEN

If you need more information about Ge wafer, please visit our website:www.qualitymaterial.net  , send us email at powerwaymaterial@gmail.com.

1 条评论:

  1. We are using 40x40 mil size and 45x45 mil size chips for 1W . And 45x22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, drive current 350 mA ( it can be change if you have suggest for it ), can you give us suggestion?

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