Ge/Si Heterojunction Photodiodes Fabricated by Low Temperature Wafer Bonding

Ge/Si heterojunctions are formed by wet wafer bonding at annealing temperatures of 250 or 350 °C. Photodiodes fabricated using Ge/Si heterojunctions exhibit photocurrents flowing over the heterojunction with an internal quantum efficiency higher than 80% at wavelengths between 1000 and 1550 nm. The measured photocurrent–voltage and capacitance–voltage characteristics reveal that the electrical property of the heterojunctions is the same as that for samples fabricated by higher temperature annealing

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com