We report the first demonstration of electroluminescence at 1.3 µm from InAs/GaAs quantum dots (QDs) monolithically grown on a Ge/Si substrate by metal organic chemical vapor deposition (MOCVD). High-density coalescence-free InAs/Sb:GaAs QDs emitting at 1.3 µm were obtained on a GaAs/Ge/Si wafer. The post-growth annealing of the GaAs buffer layer shows a significant improvement in the room-temperature (RT) photoluminescence (PL) intensity of QDs grown on a GaAs/Ge/Si wafer, comparable to those QDs grown on a reference GaAs substrate. Together, these results are promising for the realization of a QD laser on a Si substrate by MOCVD for silicon photonics application.
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