It is proposed and investigated a method for growing thin uniform germanium layers onto large silicon substrates. The technique uses the hexagonally arranged local sources filled with liquid germanium. Germanium evaporates on very close substrate and in these conditions the residual gases vapor pressure highly reduces. It is shown that to achieve uniformity of the deposited layer better than 97% the critical thickness of the vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.
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