In this paper the effect of germanium doping
on oxygen donors in Czochralski (CZ) silicon has been investigated. It is found
that germanium suppresses the formation of thermal donors during annealing at
450 °C, as a result of the reaction of Ge with point defects in CZ silicon.
Meanwhile, it is clarified that germanium enhances the formation of new donors
in CZ silicon, which is proposed to be a process associated with the nucleation
enhancement of oxygen precipitation by germanium doping.
Source:IOPscience
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