The direct band gap optical gain of tensile-strained,
highly n-doped germanium on silicon is investigated by femtosecond ultrafast
transmittance spectroscopy. A germanium film with 0.22% tensile strain is grown
on a silicon substrate by using molecular beam epitaxy. An activated doping
concentration up to 4 × 1019 cm−3 is achieved by phosphorus diffusion from a
spin-on dopant source. The transmittance of the germanium film is clearly
increased upon increasing the pump power. A peak optical gain of up to 5300
cm−1 around 1.7 µm and a gain spectrum broader than 300 nm are obtained. These
results show a simple yet promising way to realize gain medium for
monolithic-integrated germanium lasers.
Source:IOPscience
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