We report the growth process and materials
characterization of germanium–carbon alloys (Ge1−xCx) deposited directly on Si
(1 0 0) substrates by ultra-high-vacuum chemical vapour deposition. The Ge1−xCx
films are characterized by transmission electron microscopy, etch-pit density,
x-ray diffraction, secondary ion mass spectrometry and electron energy loss
spectroscopy. The results show that the films exhibit low threading dislocation
densities despite significant strain relaxation. We also present evidence for
carbon segregation in the Ge1−xCx and interpret these results as a strain
relaxation mechanism.
Source:IOPscience
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