We present the design methodology for Ge passive components including single-mode waveguide, grating couplers, multimode interferometer (MMI) couplers, and micro-ring resonators on the Ge-on-insulator wafer at a 1.95 µm wavelength. Characterizations of the fabricated Ge passive devices reveal a good consistence between the experimental and simulation results. By using the Ge micro-ring device, we also reveal that the thermo-optic coefficient in the Ge strip waveguide is 5.74 ×10−4/°C, which is much greater than that in Si.
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