Dislocations in p-type Si−Ge single crystals (2–8 at% Ge) grown with the Czochralski technique are investigated by synchrotron white beam topography in transmission geometry. As the Ge concentration increases, the dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries, and the dislocation density increases from <102 cm−2 to 105–106 cm−2 at 8 at%. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρv, Hall hole mobility μp, carrier lifetime τe and I–V characteristics. Here τe and I–V characteristics are measured from the diodes fabricated by bonding the p-Si1−xGex to n-Si wafers. I–V characteristics are not deteriorated in spite of a five times decrease in τe with the Ge concentration.
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