Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics
Orientation-controlled large-grain (≥10 µm) crystal, i.e., quasi-single crystal, Ge-rich (≥50%) SiGe on insulator grown at low temperatures (≤300 °C) are desired for realization of high-performance flexible electronics. To achieve this, the Au-induced crystallization technique using a-SiGe/Au stacked structures has been developed. This enables formation of (111)-oriented large-grain (≥10 µm) Si1−xGex (x ≥ 0.5) crystals on insulating substrates at low temperatures (300 °C). The surface layers of the grown SiGe crystals have uniform lateral composition profiles. By using this technique, formation of quasi-single crystal Ge on flexible plastic sheets is demonstrated. This technique will be useful to realize high-performance flexible electronics.