2020年4月13日星期一
Physical and Electrical Properties of Polycrystalline Si1 − x Ge x Deposited Using Single-Wafer-Type Low Pressure CVD
Polycrystalline (poly)
films have been suggested as a promising alternative to the currently employed poly silicon gate electrode for complementary metal oxide semiconductor
field effect transistor
technology due to lower resistivity, less boron penetration, and less gate depletion effect than that of poly Si gates. We investigated the deposition characteristics and physical properties of poly
films using
and
as deposition source gases in single-
wafer
-type low pressure chemical vapor deposition (LPCVD) system and the
electrical properties
of
MOS capacitors with the poly
gate stack. Deposition rate as well as
Ge
content of poly
films shows the large increase with the addition of a small fraction of
while, above critical
flux, it is slightly changed. In addition, the Ge content in poly
films decreased with an increase in deposition temperature. The flatband voltage of the poly
gate stack decreased by 0.3 V and gate depletion effect of poly
gate stack was reduced by 18% as compared to that of the poly Si gate stack. In addition, the charge to breakdown
of the poly
gate stack was higher than that of poly Si gate stack. © 2003 The Electrochemical Society. All rights reserved.
Source:IOPscience
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