2013年6月24日星期一

Detail Application of Silicon Carbide

Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.
 
Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations:
 
 
1.SiC substrate for X-ray monochromators:such as,using SiC's large d-spacing of about 15 A;
 
2.SiC substrate for high voltage devices;
 
3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition;
 
4.For silicon carbide p-n diode;
 
5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption coefficient and a low two photon absorption coefficient for 1300 nm.  
 
6.SiC substrate for heat spreader: For example,the Silicon carbide crystal will be capillary bonded on a flat gain chip surface of VECSEL (Laser) to remove the generated pump heat. Therefore, the following properties are important: 
1)Semi-insulating type required to prevent free carrier absorption of the laser light;

2) Double side polished are preferred;

3)Surface roughness:  < 2nm, so that the surface is enough flat for bonding;

7.SiC substrate for THz system application: Normally it require THz transparency

8.SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on off axis substrate and on axis are both available, surface side on C-face or Si face are both available.

 9.SiC substrate for process development loke ginding, dicing and etc

10.SiC substrate for fast photo-electric switch

11.SiC substrate for heat sink: thermal conductivity and thermal expansion are concerned.

12.SiC substrate for laser: optical, surface and stranparence  are concerned.

13.SiC substrate for III-V epitaxy, normally off axis substrate are required.

Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, he can give researchers suggestions in different application.

2013年6月17日星期一

P Type GaN Template

Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.  
 
“Now we can offer wide range nitirde semiconductor materials,including GaN, InGaN, InN, and AlN epi wafer with a wide range of deposition rates, various type: n type, p type and semi-insulating, various doping levels, wide composition ranges, and low defect densities, to meet our various customer's requests,including researcher and device foundry",said Victor Chan, a senior marketing manager for the company.
 
The Product
 
New substrates consist of an  p-GaN layer deposited on 2-inch GaN/sapphire template.  
 
Crystal Structure:
 
p-GaN  >=2um
u-GaN   >=2um
 
Buffer layer:-
 
Sapphire  430um 
 
 
About Xiamen Powerway Advanced Material Co., Ltd
 
 
 
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
 
In 2001,PAM-XIAMEN has been involved in GaN material research.PAM-XIAMEN now offer  GaN, InGaN, InN, and AlN epitaxial products with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities.
 
If you need more information about p-GaN wafer, please visit: http://www.powerwaywafer.com/GaN-Templates.html