Products

Xiamen Powerway Advanced Material Co.,Ltd., a leading  supplier of Ge wafer Substrate  and other related products and services And now PAM-XIAMEN offer specification as follows:

Ge wafer for microelectronic application

N type, Sb doped Ge wafer

N type,undoped Ge wafer

P type,Ga doped Ge wafer

Available size:2”-4”

Available orientation: (100),(111),or custom specs.

Available grade: IR grade, electronic grade and cell grade

Resistivity:

N - type : 0.007-30 ohm-cm

P - type : 0.001-30 ohm-cm

Undoped : >=30 ohm-cm

Surface: as-cut, single side polished, double side polished Ge wafer for optical grade:  SL.No Material Specifications: 　 1 Crystalline Form : Polycrystalline 2 Conductivity Type : n-type 3 Absorption Coefficient, at 25°C 0.035cm-1 max @10.6µm 4 Typical Resistivity : 3-40 ohm-cm 5 Density : 5.3 g/cc 6 Mohs Hardness : 6.3 7 Oxygen Content : < 0.03 ppm 8 Holes and Inclusions: <0.05 mm 9 Poisson Ratio : 0.278 10 Youngs Modulus (E) : 100 Gpa SL.No Optical Properties: 　 1 dn/dt  from 250-350 K : 4 X 10-4 K-1 2 Transmission at 25°C @10.6 µm wavelength 　 　 for uncoated sample of thickness 10mm : Max. 47% or more 3 Refractive Index @ 10.8 µm : 4.00372471±0.0005 SL.No Thermal Properties 　 1 Melting Point (K) : 1210.4 2 Heat Capacity @ 300K (J/kg.K): 322 3 Thermal Conductivity @293 K : 59 Wm-1 K-1 4 Coefficient Thermal Expansion @ (20°C) (10-6 K): 5.8

Relative products:
ge wafer
ge wafer cleaning
si ge wafer
ge wafer breaker
ge on siliconwafer

Source: PAM-XIAMEN

If you need more information about Ge wafer, please visit our website:www.qualitymaterial.net  , send us email at powerwaymaterial@gmail.com.