GE Wafer: 十一月 2018

2018年11月27日星期二

Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics

We present the design methodology for Ge passive components including single-mode waveguide, grating couplers, multimode interferometer (MMI) couplers, and micro-ring resonators on the Ge-on-insulator wafer at a 1.95 µm wavelength. Characterizations of the fabricated Ge passive devices reveal a good consistence between the experimental and simulation results. By using the Ge micro-ring device, we also reveal that the thermo-optic coefficient in the Ge strip waveguide is 5.74 ×10−4/°C, which is much greater than that in Si.

Source:IOPscience

For more information, please visit our website: http://www.powerwaywafer.com,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

2018年11月13日星期二

Wafer-scale layer transfer of GaAs and Ge onto Si wafers using patterned epitaxial lift-off

We have developed a wafer-scale layer-transfer technique for transferring GaAs and Ge onto Si wafers of up to 300 mm in diameter. Lattice-matched GaAs or Ge layers were epitaxially grown on GaAs wafers using an AlAs release layer, which can subsequently be transferred onto a Si handle wafer via direct wafer bonding and patterned epitaxial lift-off (ELO). The crystal properties of the transferred GaAs layers were characterized by X-ray diffraction (XRD), photoluminescence, and the quality of the transferred Ge layers was characterized using Raman spectroscopy. We find that, after bonding and the wet ELO processes, the quality of the transferred GaAs and Ge layers remained the same compared to that of the as-grown epitaxial layers. Furthermore, we realized Ge-on-insulator and GaAs-on-insulator wafers by wafer-scale pattern ELO technique.